msf12n6 5 6 5 0v n - channel mosfet publication order number: [ msf12n60 ] ? bruckewell technology corporation rev. a - 2014 description the msf12n6 5 is a n - channel enhancement - mode mosfet , providing the designer with the best combination of fast switching, ruggedized device design, low on - resistance and cost effectiveness. the to - 220f package is universally preferred for all c ommercial - industrial applications features ? low gate charge ( typical 52nc) ? high ruggedness ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs compliant package application ? power factor correction ? lcd tv power ? full and ha lf bridge power packing & order information 50/tube ; 1,000/bo graphic symbol maximum ratings and electrical characteristics absolute maximum ratings (tc=25c unless otherwise noted) symbol parameter value unit v ds drain - source voltage 6 5 0 v v gs gate - source voltage 30 v i d drain current - continuous (tc=25 c ) 12 a drain current - continuous (tc= 100 c ) 7.4 a i dm drain current pulsed 48 a e as s ingle pulsed avalanche energy 865 mj e ar repetitive avalanche energy 23.1 mj dv/dt peak diode recovery dv/dt 4 .5 v/ns p d power dissipation ( tc = 25 c) power dissipation (tc=100c) 5 4 w 0. 4 3 w/ c ? drain current limited by maximum junction temperature
msf12n6 5 6 5 0v n - channel mosfet publication order number: [ msf12n60 ] ? bruckewell technology corporation rev. a - 2014 absolute maximum ratings (tc=25c unless otherwise noted) symbol parameter value unit t j ,t stg operating and storage temperature range - 55 to +150 c note: 1. repetitive rating; pulse width limited by maximum junction temperature. on characteristics symbol parameter test conditions min typ. max. unit s v gs gate threshold voltage v ds =v gs ,i d = 250a 3 .0 -- 5 .0 v r ds(on) static drain - source on - resistance v gs =10v,i d = 3 a -- 1.95 2.4 off characteristics symbol parameter test conditions min typ. max. unit s v gs gate threshold voltage v ds =v gs ,i d =250a v gs =10v,i d = 3 a 2.0 -- 4.0 v r ds(on) static dr ain - source on - resistance -- 0.58 0.65 b v dss drain - source breakdown voltage v gs =0 v , i d =250a 600 -- -- v b v dss / t j breakdown voltage temperature coefficient i d =250a, referenced to 25 c -- 0.5 -- v/ c i dss zero gate voltage drain current v ds = 60 0v , v gs = 0 v v ds = 48 0v , t c = 125 c -- -- 1 10 a i gss f gate - body leakage current, forward v gs = 3 0v , v d s = 0 v -- -- 100 n a i gssr gate - body leakage current, reverse v gs = - 3 0v , v d s = 0 v -- -- - 100 n a dynamic characteristics symbol parameter test conditions mi n typ. max. unit s c iss input capacitance v ds =25v, v gs =0v, f=1.0mhz -- 1 760 2 290 pf c oss output capacitance -- 182 235 pf c rss reverse transfer capacitance -- 21 2 8 pf dynamic characteristics symbol parameter test conditions min typ. max. unit s t d( on) turn - on time v ds = 25 0 v, i d = 12 a, r g = 10 -- 30 70 ns t r turn - on time -- 85 180 ns t d(off) turn - off delay time -- 140 280 ns tf turn - off fall time -- 90 190 ns q g total gate charge v ds = 480 v,i d = 12 a , v gs = 10 v -- 48 63 nc q gs gate - source charge -- 8.5 -- nc q g d gate - drain charge -- 21 -- nc
msf12n6 5 6 5 0v n - channel mosfet publication order number: [ msf12n60 ] ? bruckewell technology corporation rev. a - 2014 source - drain diode maximum ratings and characteristics symbol parameter test conditions min typ. max. unit s i s continuous source - drain diode forward current -- -- 12 a i sm ism pulsed source - drain diode forward current -- -- 48 v sd source - drain d iode forward voltage i s = 12 a , v gs = 0v -- -- 1. 5 v t rr reverse recovery time i s = 12 a , v gs = 0v dif/dt=100a/s -- 46 0 -- ns q rr reverse recovery charge -- 4.9 -- c
msf12n6 5 6 5 0v n - channel mosfet publication order number: [ msf12n60 ] ? bruckewell technology corporation rev. a - 2014 characteristics curve fig.1 - on region characteristics fig. 2 - transfer characteristics fig.3 - on resistance variation vs drain current and gate voltage fig.4 - body diode forward voltage variation with source current and temperature fig.5 - capacitance characteristics fig.6 - gate charge characteristics
msf12n6 5 6 5 0v n - channel mosfet publication order number: [ msf12n60 ] ? bruckewell technology corporation rev. a - 2014 characteristics curve fig. 7 - breakdown voltage variation vs temperature fig. 8 - on - resistance va riation vs temperature fig. 9 - maximum safe operating area fig. 10 - maximum drain current vs case temperature fig.11 - transient thermal response curve
msf12n6 5 6 5 0v n - channel mosfet publication order number: [ msf12n60 ] ? bruckewell technology corporation rev. a - 2014 characteristics test circuit & waveform fig 12. resistive switching test circuit & waveforms fig 13. gate charge test circuit & waveform fig 14. unclamped inductive switching test circuit & waveforms
msf12n6 5 6 5 0v n - channel mosfet publication order number: [ msf12n60 ] ? bruckewell technology corporation rev. a - 2014 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or desi gn or otherwise. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any d atasheet or in any other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent p ermitted by applicable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, consequential or incidental damages. (iii) any and all impli ed warranties, including warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewells knowledge of typical requirements that are often placed on bruckewell products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. product specifications do no t expand or otherwise modify bruckewells terms and conditions of purchase, including but not limited to the warranty expressed therein.
|
